Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition
نویسنده
چکیده
ZnOfilmswith thickness of 80 nmwere grownbypulsed laser deposition (PLD) onMgO (100) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnOsingle crystalwereperformedby slowpositron implantation spectroscopy (SPIS). Itwas found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited onMgO substrate exhibits higher concentration of defects than the filmdeposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnOcrystalwere subsequently loadedwithhydrogenby electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO. 2013 Elsevier B.V. All rights reserved.
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